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FDP8870
Power MOSFET, N Channel, 30 V, 156 A, 0.0034 ohm, TO-220AB, Through Hole
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No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDP8870Copy
Newark Part No.60J0601
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id156A
Drain Source On State Resistance0.0034ohm
On Resistance Rds(on)0.0034ohm
Transistor MountingThrough Hole
Power Dissipation Pd160W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Transistor Case StyleTO-220AB
Power Dissipation160W
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product Range-
SVHCLead
Alternatives for FDP8870
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Product Overview
The FDP8870 is a N-channel MOSFET produced using PowerTrench® process. It is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS (ON) and fast switching speed.
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
- High power and current handing capability
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.0034ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Transistor Case Style
TO-220AB
No. of Pins
3Pins
Qualification
-
SVHC
Lead
Channel Type
N Channel
Continuous Drain Current Id
156A
On Resistance Rds(on)
0.0034ohm
Power Dissipation Pd
160W
Gate Source Threshold Voltage Max
2.5V
Power Dissipation
160W
Operating Temperature Max
175°C
Product Range
-
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
