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FDN360P
MOSFET Transistor, P Channel, 2 A, -30 V, 80 mohm, -10 V, 20 V RoHS Compliant: Yes
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3,000 In Stock
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| Quantity | Price |
|---|---|
| 3000+ | $0.146 |
| 6000+ | $0.139 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$438.00
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDN360PCopy
Newark Part No.87X5244
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id2A
Drain Source On State Resistance0.08ohm
On Resistance Rds(on)0.08ohm
Transistor Case StyleSuperSOT
Transistor MountingSurface Mount
Power Dissipation Pd500mW
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max20V
Power Dissipation500mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.08ohm
Transistor Case Style
SuperSOT
Power Dissipation Pd
500mW
Gate Source Threshold Voltage Max
20V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
2A
On Resistance Rds(on)
0.08ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
500mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
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Associated Products
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability
