FDMS86500L
Power MOSFET, N Channel, 60 V, 80 A, 0.0025 ohm, Power 56, Surface Mount
| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | FDMS86500LCopy |
| Manufacturer Standard Lead Time | 101 weeks |
| Newark Part No. | Full Reel85AC1779 Re-Reel88T3346RL Cut Tape88T3346 |
| Your Part Number | |
| Technical Datasheet |
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| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $4.040 | $4.04 |
| Total Price | $4.04 | ||
| Quantity | Price |
|---|---|
| 1+ | $4.040 |
| 50+ | $2.640 |
| 100+ | $1.970 |
| 250+ | $1.810 |
| 500+ | $1.650 |
| 1000+ | $1.530 |
| 2500+ | $1.490 |
| 5000+ | $1.440 |
| Quantity | Price |
|---|---|
| 3000+ | $1.810 |
| 6000+ | $1.770 |
| 9000+ | $1.740 |
| 15000+ | $1.700 |
| 30000+ | $1.670 |
| 75000+ | $1.630 |
Product Information
| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | FDMS86500LCopy |
| Manufacturer Standard Lead Time | 101 weeks |
| Newark Part No. | Full Reel85AC1779 Re-Reel88T3346RL Cut Tape88T3346 |
| Technical Datasheet | |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 60V |
| Continuous Drain Current Id | 80A |
| On Resistance Rds(on) | 0.0021ohm |
| Drain Source On State Resistance | 0.0025ohm |
| Transistor Case Style | Power 56 |
| Transistor Mounting | Surface Mount |
| Rds(on) Test Voltage | 10V |
| Power Dissipation Pd | 104W |
| Gate Source Threshold Voltage Max | 1.8V |
| Power Dissipation | 104W |
| No. of Pins | 8Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | - |
| MSL | MSL 1 - Unlimited |
| SVHC | Lead (25-Jun-2025) |
Product Overview
The FDMS86500L is a 60V N-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. This product is general usage and suitable for many different applications.
- 100% UIL tested
- Advance package and silicon combination for low RDS (ON) and high efficiency
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 80A |
| Drain Source On State Resistance | 0.0025ohm |
| Transistor Mounting | Surface Mount |
| Power Dissipation Pd | 104W |
| Power Dissipation | 104W |
| Operating Temperature Max | 150°C |
| Qualification | - |
| SVHC | Lead (25-Jun-2025) |
| Drain Source Voltage Vds | 60V |
|---|---|
| On Resistance Rds(on) | 0.0021ohm |
| Transistor Case Style | Power 56 |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 1.8V |
| No. of Pins | 8Pins |
| Product Range | - |
| MSL | MSL 1 - Unlimited |
Technical Docs (3)
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Legislation and Environmental
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| RoHS Compliant: | Y-Ex RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | Lead (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |
 | Proposition 65 |