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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDMC5614P
Newark Part No.61M6260
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id5.7A
Drain Source On State Resistance0.084ohm
Transistor Case StylePower 33
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.95V
Power Dissipation2.1W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (17-Jan-2022)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
5.7A
Transistor Case Style
Power 33
Rds(on) Test Voltage
10V
Power Dissipation
2.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (17-Jan-2022)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.084ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.95V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2022)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability
