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FDMA905P
Power MOSFET, P Channel, 12 V, 10 A, 0.014 ohm, MicroFET, Surface Mount
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ManufacturerONSEMI
Manufacturer Part NoFDMA905P
Newark Part No.84W8860
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 13 week(s)
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDMA905P
Newark Part No.84W8860
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id10A
Drain Source On State Resistance0.014ohm
On Resistance Rds(on)0.014ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd2.4W
Transistor Case StyleMicroFET
Gate Source Threshold Voltage Max700mV
Power Dissipation2.4W
No. of Pins6Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
12V
Drain Source On State Resistance
0.014ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
2.4W
Gate Source Threshold Voltage Max
700mV
No. of Pins
6Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
10A
On Resistance Rds(on)
0.014ohm
Rds(on) Test Voltage
4.5V
Transistor Case Style
MicroFET
Power Dissipation
2.4W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
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Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
WARNINGProposition 65