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FDD8770
Power MOSFET, N Channel, 25 V, 35 A, 0.004 ohm, TO-252AA, Surface Mount
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No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDD8770
Newark Part No.67P3471
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds25V
Continuous Drain Current Id35A
On Resistance Rds(on)0.0048ohm
Drain Source On State Resistance0.004ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage20V
Power Dissipation Pd115W
Transistor Case StyleTO-252AA
Gate Source Threshold Voltage Max1.6V
Power Dissipation115W
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product Range-
SVHCLead
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
25V
On Resistance Rds(on)
0.0048ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
115W
Gate Source Threshold Voltage Max
1.6V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
35A
Drain Source On State Resistance
0.004ohm
Rds(on) Test Voltage
20V
Transistor Case Style
TO-252AA
Power Dissipation
115W
Operating Temperature Max
175°C
Product Range
-
SVHC
Lead
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate