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FDD6670A
Power MOSFET, N Channel, 30 V, 15 A, 0.008 ohm, TO-252 (DPAK), Surface Mount
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ManufacturerONSEMI
Manufacturer Part NoFDD6670A
Newark Part No.47T5024
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDD6670A
Newark Part No.47T5024
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id15A
On Resistance Rds(on)0.008ohm
Drain Source On State Resistance8000µohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd70W
Gate Source Threshold Voltage Max1.8V
Power Dissipation70W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (23-Jan-2024)
Product Overview
The FDD6670A is a N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS (ON), fast switching speed and extremely low RDS (ON) in a small package.
- Low gate charge
- Fast switching speed
- High performance Trench technology for extremely low RDS (ON)
Applications
Power Management, Motor Drive & Control
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
15A
Drain Source On State Resistance
8000µohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
70W
Power Dissipation
70W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (23-Jan-2024)
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.008ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.8V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate