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FDB28N30TM
Power MOSFET, N Channel, 300 V, 28 A, 0.129 ohm, TO-263AB, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDB28N30TM
Newark Part No.78M0907
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 16 week(s)
| Quantity | Price |
|---|---|
| 1+ | $1.560 |
| 3000+ | $1.490 |
| 6000+ | $1.430 |
| 12000+ | $1.330 |
| 18000+ | $1.290 |
| 30000+ | $1.260 |
Price for:Each (Supplied on Full Reel)
Minimum: 800
Multiple: 800
$1,248.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDB28N30TM
Newark Part No.78M0907
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds300V
Continuous Drain Current Id28A
Drain Source On State Resistance0.129ohm
On Resistance Rds(on)0.108ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd250W
Transistor Case StyleTO-263AB
Gate Source Threshold Voltage Max5V
Power Dissipation250W
No. of Pins2Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Product Overview
The FDB28N30TM is a N-channel enhancement-mode Power FET produced using planar stripe DMOS technology. This advanced technology has been especially tailored to minimize ON-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. It is suited for high efficient switched mode power supplies and active power factor correction.
- Improved dV/dt capability
- 100% avalanche tested
- Fast switching
- 39nC typical low gate charge
- 35pF typical low Crss
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
300V
Drain Source On State Resistance
0.129ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
250W
Gate Source Threshold Voltage Max
5V
No. of Pins
2Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
28A
On Resistance Rds(on)
0.108ohm
Rds(on) Test Voltage
10V
Transistor Case Style
TO-263AB
Power Dissipation
250W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Alternatives for FDB28N30TM
1 Product Found
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate