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ManufacturerONSEMI
Manufacturer Part NoFDB045AN08A0
Newark Part No.28H9655
Your Part Number
Technical Datasheet
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Available in quantity shown
| Quantity | Price |
|---|---|
| 1+ | $5.100 |
| 10+ | $3.700 |
| 25+ | $3.450 |
| 50+ | $3.200 |
| 100+ | $2.950 |
| 250+ | $2.920 |
| 500+ | $2.890 |
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Multiple: 1
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDB045AN08A0
Newark Part No.28H9655
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds75V
Continuous Drain Current Id80A
On Resistance Rds(on)0.0045ohm
Drain Source On State Resistance0.0045ohm
Transistor MountingSurface Mount
Power Dissipation Pd310W
Rds(on) Test Voltage10V
Transistor Case StyleTO-263AB
Gate Source Threshold Voltage Max4V
Power Dissipation310W
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product Range-
SVHCLead
Alternatives for FDB045AN08A0
1 Product Found
Product Overview
The FDB045AN08A0 is a N-channel MOSFET produced using advanced PowerTrench® process. It is suitable for use in synchronous rectification for ATX/server/telecom PSU and battery protection circuit.
- Low miller charge
- Low Qrr body diode
- UIS Capability (single pulse and repetitive pulse)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
75V
On Resistance Rds(on)
0.0045ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
80A
Drain Source On State Resistance
0.0045ohm
Power Dissipation Pd
310W
Transistor Case Style
TO-263AB
Power Dissipation
310W
Operating Temperature Max
175°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability