FCB20N60
Power MOSFET, N Channel, 600 V, 20 A, 0.19 ohm, TO-263 (D2PAK), Surface Mount
| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | FCB20N60Copy |
| Manufacturer Standard Lead Time | 20 weeks |
| Newark Part No. | Full Reel86AK4912 Re-Reel93K5944RL Cut Tape93K5944 |
| Your Part Number | |
| Technical Datasheet |
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| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $7.200 | $7.20 |
| Total Price | $7.20 | ||
| Quantity | Price |
|---|---|
| 1+ | $7.200 |
| 10+ | $6.350 |
| 100+ | $5.820 |
| 500+ | $5.260 |
| 1000+ | $4.580 |
| 2500+ | $3.630 |
| 10000+ | $3.440 |
| Quantity | Price |
|---|---|
| 800+ | $3.630 |
| 1600+ | $3.460 |
| 2400+ | $3.250 |
| 4000+ | $3.010 |
| 8000+ | $2.880 |
| 20000+ | $2.840 |
Product Information
| Manufacturer | ONSEMI |
|---|---|
| Manufacturer Part No | FCB20N60Copy |
| Manufacturer Standard Lead Time | 20 weeks |
| Newark Part No. | Full Reel86AK4912 Re-Reel93K5944RL Cut Tape93K5944 |
| Technical Datasheet | |
| Transistor Polarity | N Channel |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 600V |
| Continuous Drain Current Id | 20A |
| Drain Source On State Resistance | 0.19ohm |
| On Resistance Rds(on) | 0.15ohm |
| Transistor Case Style | TO-263 (D2PAK) |
| Transistor Mounting | Surface Mount |
| Rds(on) Test Voltage | 10V |
| Power Dissipation Pd | 208W |
| Gate Source Threshold Voltage Max | 5V |
| Power Dissipation | 208W |
| No. of Pins | 3Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | - |
| MSL | MSL 1 - Unlimited |
| SVHC | Lead (27-Jun-2024) |
Product Overview
The FCB20N60 is a N-channel SuperFET® high voltage super-junction MOSFET utilizes charge balance technology for outstanding low ON-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dV/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
- Ultra low gate charge (Qg = 75nC)
- Low effective output capacitance (Coss.eff = 165pF)
- 100% avalanche tested
Applications
Industrial, Power Management, Communications & Networking, Lighting, Alternative Energy
Technical Specifications
| Transistor Polarity | N Channel |
|---|---|
| Drain Source Voltage Vds | 600V |
| Drain Source On State Resistance | 0.19ohm |
| Transistor Case Style | TO-263 (D2PAK) |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 5V |
| No. of Pins | 3Pins |
| Product Range | - |
| MSL | MSL 1 - Unlimited |
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 20A |
| On Resistance Rds(on) | 0.15ohm |
| Transistor Mounting | Surface Mount |
| Power Dissipation Pd | 208W |
| Power Dissipation | 208W |
| Operating Temperature Max | 150°C |
| Qualification | - |
| SVHC | Lead (27-Jun-2024) |
Technical Docs (1)
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Legislation and Environmental
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| RoHS Compliant: | Y-Ex RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | Lead (27-Jun-2024) |
| Download Product Compliance Certificate | Product Compliance Certificate |