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BD676G
Darlington Transistor, Darlington, PNP, 3 Pins
Image is for illustrative purposes only. Please refer to product description.
No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoBD676G
Newark Part No.98H0510
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage V(br)ceo45V
Collector Emitter Voltage Max45V
Continuous Collector Current4A
Transition Frequency200MHz
Power Dissipation40W
Transistor MountingThrough Hole
No. of Pins3Pins
Transistor Case StyleTO-225AA
DC Current Gain hFE Min750hFE
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCNo SVHC (19-Jan-2021)
Product Overview
The BD676G is a -45V Silicon PNP Bipolar Darlington Plastic Medium Power Transistor that can be used as output devices in complementary general purpose amplifier applications. The transistor has monolithic construction.
- High DC current gain
- Collector-base voltage (Vcbo = 45V)
- Emitter-base voltage (Vcbo = 5V)
Applications
Industrial
Technical Specifications
Transistor Polarity
PNP
Collector Emitter Voltage Max
45V
Transition Frequency
200MHz
Transistor Mounting
Through Hole
Transistor Case Style
TO-225AA
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (19-Jan-2021)
Collector Emitter Voltage V(br)ceo
45V
Continuous Collector Current
4A
Power Dissipation
40W
No. of Pins
3Pins
DC Current Gain hFE Min
750hFE
Qualification
-
MSL
-
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (19-Jan-2021)
Download Product Compliance Certificate
Product Compliance Certificate
WARNINGProposition 65