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BD676AG
Darlington Transistor, PNP, 45 V, 40 W, 4 A, TO-225, 3 Pins
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| 10+ | $0.079 |
| 100+ | $0.079 |
| 500+ | $0.079 |
| 1000+ | $0.079 |
| 2500+ | $0.079 |
| 10000+ | $0.079 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoBD676AG
Newark Part No.26K3518
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max45V
Collector Emitter Voltage V(br)ceo45V
Power Dissipation Pd40W
Transition Frequency200MHz
Continuous Collector Current4A
DC Collector Current4A
Power Dissipation40W
RF Transistor CaseTO-225
No. of Pins3Pins
DC Current Gain hFE750hFE
Transistor Case StyleTO-225
Transistor MountingThrough Hole
Operating Temperature Max150°C
DC Current Gain hFE Min750hFE
Product Range-
Qualification-
SVHCNo SVHC (19-Jan-2021)
Technical Specifications
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
45V
Transition Frequency
200MHz
DC Collector Current
4A
RF Transistor Case
TO-225
DC Current Gain hFE
750hFE
Transistor Mounting
Through Hole
DC Current Gain hFE Min
750hFE
Qualification
-
Collector Emitter Voltage Max
45V
Power Dissipation Pd
40W
Continuous Collector Current
4A
Power Dissipation
40W
No. of Pins
3Pins
Transistor Case Style
TO-225
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (19-Jan-2021)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (19-Jan-2021)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability
WARNINGProposition 65