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ManufacturerONSEMI
Manufacturer Part NoBD239C
Newark Part No.64AH2629
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $1.950 |
| 10+ | $1.310 |
| 100+ | $1.080 |
| 500+ | $0.863 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoBD239C
Newark Part No.64AH2629
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max100V
Collector Emitter Voltage V(br)ceo100V
Continuous Collector Current2A
Power Dissipation30W
Power Dissipation Pd30W
Transistor Case StyleTO-220
DC Collector Current2A
DC Current Gain hFE15hFE
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency-
DC Current Gain hFE Min15hFE
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The BD239C is a 100V Silicon NPN Power Transistor manufactured in planar technology with base island layout. The transistor shows exceptional high gain performance coupled with very low saturation voltage. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
- Well-controlled hFE parameter for increased reliability
- Collector-base voltage (Vcbo = 100V)
- Emitter-base voltage (Vebo = 5V)
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
100V
Power Dissipation
30W
Transistor Case Style
TO-220
DC Current Gain hFE
15hFE
No. of Pins
3Pins
DC Current Gain hFE Min
15hFE
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
100V
Continuous Collector Current
2A
Power Dissipation Pd
30W
DC Collector Current
2A
Transistor Mounting
Through Hole
Transition Frequency
-
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability