Print Page
2SC6017-E
Bipolar (BJT) Single Transistor, NPN, 50 V, 10 A, 20 W, TO-251, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part No2SC6017-E
Newark Part No.65T2501
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part No2SC6017-E
Newark Part No.65T2501
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo50V
Collector Emitter Voltage Max50V
Continuous Collector Current10A
Power Dissipation20W
Power Dissipation Pd20W
DC Collector Current10A
Transistor Case StyleTO-251
DC Current Gain hFE200hFE
Transistor MountingThrough Hole
No. of Pins4Pins
Transition Frequency200MHz
DC Current Gain hFE Min200hFE
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
50V
Power Dissipation
20W
DC Collector Current
10A
DC Current Gain hFE
200hFE
No. of Pins
4Pins
DC Current Gain hFE Min
200hFE
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage V(br)ceo
50V
Continuous Collector Current
10A
Power Dissipation Pd
20W
Transistor Case Style
TO-251
Transistor Mounting
Through Hole
Transition Frequency
200MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
WARNINGProposition 65