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2N7002LT1G
Power MOSFET, N Channel, 60 V, 115 mA, 7.5 ohm, SOT-23, Surface Mount
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ManufacturerONSEMI
Manufacturer Part No2N7002LT1G
Newark Part No.39K1536
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $0.231 |
| 25+ | $0.148 |
| 50+ | $0.124 |
| 100+ | $0.099 |
| 250+ | $0.087 |
| 500+ | $0.075 |
| 1000+ | $0.067 |
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Product Information
ManufacturerONSEMI
Manufacturer Part No2N7002LT1G
Newark Part No.39K1536
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id115mA
On Resistance Rds(on)7.5ohm
Drain Source On State Resistance7.5ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.5V
Power Dissipation200mW
Power Dissipation Pd200mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The 2N7002LT1G is a 60V N-channel small signal MOSFET capable of 300mW power dissipation and 115mA continuous drain current.
- Halogen-free/BFR-free
- ?20VDC sate to source voltage
- 60VDC Drain to gate voltage
- 417?C/W Thermal resistance, junction to ambient
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
7.5ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
200mW
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
115mA
Drain Source On State Resistance
7.5ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.5V
Power Dissipation Pd
200mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
WARNINGProposition 65