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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQP9P25Copy
Newark Part No.46AC0865
Product RangeQFET
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds250V
Continuous Drain Current Id9.4A
On Resistance Rds(on)0.48ohm
Drain Source On State Resistance0.62ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Power Dissipation Pd120W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation120W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeQFET
Qualification-
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
250V
On Resistance Rds(on)
0.48ohm
Transistor Case Style
TO-220
Power Dissipation Pd
120W
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
QFET
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
9.4A
Drain Source On State Resistance
0.62ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
120W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (15-Jan-2018)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
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Product Compliance Certificate
