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FQD1N60CTM
Power MOSFET, N Channel, 1 A, 600 V, 9.3 ohm, 10 V, 2 V RoHS Compliant: Yes
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQD1N60CTMCopy
Newark Part No.95W3214
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id1A
Drain Source Voltage Vds600V
Drain Source On State Resistance9.3ohm
On Resistance Rds(on)9.3ohm
Rds(on) Test Voltage10V
Transistor Case StyleTO-252 (DPAK)
Gate Source Threshold Voltage Max2V
Transistor MountingSurface Mount
Power Dissipation Pd28W
No. of Pins3Pins
Power Dissipation28W
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead (17-Jan-2022)
Technical Specifications
Transistor Polarity
N Channel
Continuous Drain Current Id
1A
Drain Source On State Resistance
9.3ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2V
Power Dissipation Pd
28W
Power Dissipation
28W
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Drain Source Voltage Vds
600V
On Resistance Rds(on)
9.3ohm
Transistor Case Style
TO-252 (DPAK)
Transistor Mounting
Surface Mount
No. of Pins
3Pins
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead (17-Jan-2022)
Technical Docs (2)
Legislation and Environmental
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (17-Jan-2022)
Download Product Compliance Certificate
Product Compliance Certificate