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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQD10N20LTM
Newark Part No.54AH8751
Product RangeQFET
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id7.6A
On Resistance Rds(on)0.29ohm
Drain Source On State Resistance0.36ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation51W
Power Dissipation Pd51W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeQFET
Qualification-
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
200V
On Resistance Rds(on)
0.29ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
51W
No. of Pins
3Pins
Product Range
QFET
SVHC
No SVHC (15-Jan-2018)
Channel Type
N Channel
Continuous Drain Current Id
7.6A
Drain Source On State Resistance
0.36ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
Power Dissipation Pd
51W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate