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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQB8P10TM
Newark Part No.54AH8750
Product RangeQFET
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id8A
Drain Source On State Resistance0.53ohm
On Resistance Rds(on)0.41ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation65W
Power Dissipation Pd65W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeQFET
Qualification-
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.53ohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
65W
No. of Pins
3Pins
Product Range
QFET
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
8A
On Resistance Rds(on)
0.41ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
65W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (15-Jan-2018)
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate