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FDS6612A
MOSFET Transistor, N Channel, 8.4 A, 30 V, 0.019 ohm, 10 V, 1.9 V RoHS Compliant: Yes
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ManufacturerONSEMI
Manufacturer Part NoFDS6612A
Newark Part No.58M6636
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS6612A
Newark Part No.58M6636
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id8.4A
On Resistance Rds(on)0.019ohm
Drain Source On State Resistance0.022ohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Power Dissipation Pd2.5W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.9V
Power Dissipation2.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (23-Jan-2024)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.019ohm
Transistor Case Style
SOIC
Power Dissipation Pd
2.5W
Gate Source Threshold Voltage Max
1.9V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
8.4A
Drain Source On State Resistance
0.022ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (23-Jan-2024)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate