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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDP12N50NZ
Newark Part No.54AH8666
Product RangeUniFET II
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id11.5A
Drain Source On State Resistance0.52ohm
On Resistance Rds(on)0.46ohm
Transistor Case StyleTO-220
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation Pd170W
Power Dissipation170W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeUniFET II
Qualification-
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
500V
Drain Source On State Resistance
0.52ohm
Transistor Case Style
TO-220
Rds(on) Test Voltage
10V
Power Dissipation Pd
170W
No. of Pins
3Pins
Product Range
UniFET II
SVHC
No SVHC (15-Jan-2018)
Channel Type
N Channel
Continuous Drain Current Id
11.5A
On Resistance Rds(on)
0.46ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
Power Dissipation
170W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate