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FCPF067N65S3
MOSFET, N-CH, 650V, 44A, TO-220F-3
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFCPF067N65S3Copy
Newark Part No.84Y5813
Product RangeSuperFET III
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 26 week(s)
| Quantity | Price |
|---|---|
| 1+ | $7.540 |
| 10+ | $4.730 |
| 25+ | $4.580 |
| 50+ | $4.450 |
| 100+ | $4.310 |
| 250+ | $4.080 |
| 500+ | $3.850 |
Price for:Each
Minimum: 1
Multiple: 1
$7.54
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFCPF067N65S3Copy
Newark Part No.84Y5813
Product RangeSuperFET III
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id44A
Drain Source On State Resistance0.067ohm
On Resistance Rds(on)0.059ohm
Transistor Case StyleTO-220F
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd46W
Gate Source Threshold Voltage Max4.5V
Power Dissipation46W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeSuperFET III
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.067ohm
Transistor Case Style
TO-220F
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4.5V
No. of Pins
3Pins
Product Range
SuperFET III
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
44A
On Resistance Rds(on)
0.059ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
46W
Power Dissipation
46W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate