Print Page
MRF6V2150NBR1
RF FET Transistor, 110 V, 150 W, 10 MHz, 450 MHz, TO-272
Image is for illustrative purposes only. Please refer to product description.
ManufacturerNXP
Manufacturer Part NoMRF6V2150NBR1
Newark Part No.41AH8203
Your Part Number
Technical Datasheet
No Longer Available
Packaging Options
Product Information
ManufacturerNXP
Manufacturer Part NoMRF6V2150NBR1
Newark Part No.41AH8203
Technical Datasheet
Drain Source Voltage Vds110V
Power Dissipation150W
Continuous Drain Current Id-
Power Dissipation Pd150W
Operating Frequency Min10MHz
Operating Frequency Max450MHz
Transistor Case StyleTO-272
RF Transistor CaseTO-272
No. of Pins4Pins
Operating Temperature Max150°C
Channel TypeN Channel
Transistor MountingFlange
Product Range-
SVHCNo SVHC (27-Jun-2018)
Technical Specifications
Drain Source Voltage Vds
110V
Continuous Drain Current Id
-
Operating Frequency Min
10MHz
Transistor Case Style
TO-272
No. of Pins
4Pins
Channel Type
N Channel
Product Range
-
Power Dissipation
150W
Power Dissipation Pd
150W
Operating Frequency Max
450MHz
RF Transistor Case
TO-272
Operating Temperature Max
150°C
Transistor Mounting
Flange
SVHC
No SVHC (27-Jun-2018)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2018)
Download Product Compliance Certificate
Product Compliance Certificate