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PMCPB5530X,115
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 5.3 A, 5.3 A, 0.026 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerNEXPERIA
Manufacturer Part NoPMCPB5530X,115
Newark Part No.84W8052
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 59 week(s)
| Quantity | Price |
|---|---|
| 1+ | $1.560 |
| 10+ | $1.030 |
| 100+ | $0.686 |
Price for:Each
Minimum: 5
Multiple: 5
$7.80
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoPMCPB5530X,115
Newark Part No.84W8052
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id5.3A
Drain Source Voltage Vds20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel5.3A
Continuous Drain Current Id P Channel5.3A
Drain Source On State Resistance N Channel0.026ohm
Drain Source On State Resistance P Channel0.026ohm
Transistor Case StyleSOT-1118
No. of Pins8Pins
Power Dissipation N Channel1.17W
Power Dissipation P Channel1.17W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The PMCPB5530X is a N/P-channel complementary enhancement-mode FET in a small and leadless ultra thin surface-mount plastic package using Trench MOSFET technology. It is suitable for DC-to-DC converters and small brushless DC motor drive applications.
- Very fast switching characteristics
- Exposed drain pad for excellent thermal conduction
Technical Specifications
Channel Type
Complementary N and P Channel
Continuous Drain Current Id
5.3A
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
5.3A
Drain Source On State Resistance P Channel
0.026ohm
No. of Pins
8Pins
Power Dissipation P Channel
1.17W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds
20V
Continuous Drain Current Id N Channel
5.3A
Drain Source On State Resistance N Channel
0.026ohm
Transistor Case Style
SOT-1118
Power Dissipation N Channel
1.17W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability