Print Page
BUK9Y19-75B,115
MOSFET, N CHANNEL, 75V, 48.2A, LFPAK
Image is for illustrative purposes only. Please refer to product description.
No Longer Available
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoBUK9Y19-75B,115
Newark Part No.47T1965
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds75V
Continuous Drain Current Id48.2A
Drain Source On State Resistance0.0147ohm
On Resistance Rds(on)0.0147ohm
Transistor Case StyleSC-100
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd106W
Gate Source Threshold Voltage Max1.65V
Power Dissipation106W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
Product Overview
The BUK9Y19-75B is a N-channel enhancement-mode logic level FET in a plastic package using TrenchMOS® technology. The device has been designed and qualified to the appropriate AEC-Q101 standard for use in automotive critical applications.
- Low conduction losses due to low ON-state resistance
- Suitable for logic level gate drive sources
- Suitable for thermally demanding environments due to 175°C rating
- -55 to 175°C Junction temperature range
Applications
Automotive, Power Management, Motor Drive & Control, Lighting, Automation & Process Control, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
48.2A
On Resistance Rds(on)
0.0147ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
106W
Power Dissipation
106W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
75V
Drain Source On State Resistance
0.0147ohm
Transistor Case Style
SC-100
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.65V
No. of Pins
4Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability