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BSH111BKR
MOSFET, N-CH, 55V, 0.21A, SOT-23
Image is for illustrative purposes only. Please refer to product description.
ManufacturerNEXPERIA
Manufacturer Part NoBSH111BKR
Newark Part No.
Full Reel86AK4489
Re-Reel84Y9812
Cut Tape84Y9812
Your Part Number
Available to Order
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Packaging Options
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $0.481 |
| 10+ | $0.303 |
| 25+ | $0.266 |
| 50+ | $0.228 |
| 100+ | $0.192 |
| 250+ | $0.169 |
| 500+ | $0.143 |
| 1000+ | $0.128 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.082 |
| 6000+ | $0.079 |
| 12000+ | $0.074 |
| 18000+ | $0.070 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoBSH111BKR
Newark Part No.
Full Reel86AK4489
Re-Reel84Y9812
Cut Tape84Y9812
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id210mA
On Resistance Rds(on)2.3ohm
Drain Source On State Resistance4ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd302mW
Gate Source Threshold Voltage Max1V
Power Dissipation302mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The BSH111BK from Nexperia is a N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
- Suitable for relay driver, high speed line driver, low-side load switch and switching circuits
- Low threshold voltage
- Very fast switching
- Trench MOSFET technology
- ElectroStatic Discharge (ESD) protection > 3 kV HBM
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
55V
On Resistance Rds(on)
2.3ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
210mA
Drain Source On State Resistance
4ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
302mW
Power Dissipation
302mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability