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BSH111BKR
Power MOSFET, N Channel, 55 V, 210 mA, 4 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerNEXPERIA
Manufacturer Part NoBSH111BKRCopy
Manufacturer Standard Lead Time53 weeks
Newark Part No.
Full Reel86AK4489
Re-Reel84Y9812RL
Cut Tape84Y9812
Your Part Number
8,236 In Stock
30,000 more incoming. You can reserve stock now
Delivery in 4-6 Business Days(UK stock)
Order before 8pm EST standard shipping
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $0.246 | $0.25 |
| Total Price | $0.25 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $0.246 |
| 50+ | $0.113 |
| 100+ | $0.099 |
| 250+ | $0.088 |
| 500+ | $0.076 |
| 1000+ | $0.074 |
| 2500+ | $0.073 |
| 5000+ | $0.071 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.058 |
| 9000+ | $0.051 |
| 15000+ | $0.050 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerNEXPERIA
Manufacturer Part NoBSH111BKRCopy
Manufacturer Standard Lead Time53 weeks
Newark Part No.
Full Reel86AK4489
Re-Reel84Y9812RL
Cut Tape84Y9812
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds55V
Continuous Drain Current Id210mA
On Resistance Rds(on)2.3ohm
Drain Source On State Resistance4ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Power Dissipation Pd302mW
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1V
Power Dissipation302mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The BSH111BK from Nexperia is a N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
- Suitable for relay driver, high speed line driver, low-side load switch and switching circuits
- Low threshold voltage
- Very fast switching
- Trench MOSFET technology
- ElectroStatic Discharge (ESD) protection > 3 kV HBM
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
55V
On Resistance Rds(on)
2.3ohm
Transistor Case Style
SOT-23
Power Dissipation Pd
302mW
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
210mA
Drain Source On State Resistance
4ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Power Dissipation
302mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate