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PS21963-4
IGBT Module, Three Phase Inverter, 10 A, 2.2 V, 27 W, 100 °C, DIP
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ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoPS21963-4
Newark Part No.42M7935
Your Part Number
Technical Datasheet
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Product Information
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoPS21963-4
Newark Part No.42M7935
Technical Datasheet
Transistor PolarityN Channel
IGBT ConfigurationThree Phase Inverter
Continuous Collector Current10A
DC Collector Current10A
Collector Emitter Saturation Voltage Vce(on)600V
Collector Emitter Saturation Voltage2.2V
Power Dissipation27W
Power Dissipation Pd27W
Operating Temperature Max100°C
Junction Temperature, Tj Max100°C
Collector Emitter Voltage V(br)ceo600V
Transistor Case StyleDIP
No. of Pins25Pins
IGBT TerminationSolder
Collector Emitter Voltage Max600V
IGBT TechnologyIGBT 5 [Trench Gate]
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
N Channel
Continuous Collector Current
10A
Collector Emitter Saturation Voltage Vce(on)
600V
Power Dissipation
27W
Operating Temperature Max
100°C
Collector Emitter Voltage V(br)ceo
600V
No. of Pins
25Pins
Collector Emitter Voltage Max
600V
Transistor Mounting
Panel
SVHC
To Be Advised
IGBT Configuration
Three Phase Inverter
DC Collector Current
10A
Collector Emitter Saturation Voltage
2.2V
Power Dissipation Pd
27W
Junction Temperature, Tj Max
100°C
Transistor Case Style
DIP
IGBT Termination
Solder
IGBT Technology
IGBT 5 [Trench Gate]
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate