Print Page
Image is for illustrative purposes only. Please refer to product description.
![MITSUBISHI ELECTRIC CM75DU-12F IGBT Module, Dual [Half Bridge], 75 A, 2.2 V, 290 W, 150 °C, Module](https://www.newark.com/productimages/standard/en_US/4612613.jpg)
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM75DU-12FCopy
Newark Part No.73K1944
Product RangeF Series
Your Part Number
No Longer Available
Product Information
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM75DU-12FCopy
Newark Part No.73K1944
Product RangeF Series
Technical Datasheet
Transistor PolarityN Channel
IGBT ConfigurationDual [Half Bridge]
DC Collector Current75A
Continuous Collector Current75A
Collector Emitter Saturation Voltage2.2V
Collector Emitter Saturation Voltage Vce(on)600V
Power Dissipation Pd290W
Power Dissipation290W
Junction Temperature, Tj Max150°C
Operating Temperature Max150°C
Collector Emitter Voltage V(br)ceo600V
Transistor Case StyleModule
No. of Pins7Pins
IGBT TerminationStud
IGBT TechnologyIGBT 5 [Trench Gate]
Collector Emitter Voltage Max600V
Transistor MountingPanel
Product RangeF Series
SVHCTo Be Advised
Product Overview
The CM75DU-12F is a 600V Dual IGBTMOD™ Trench Gate Design Module designed for use in switching applications. Each module consists of two IGBT Transistors in a half bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
- Low drive power
- Low Vce (sat)
- Discrete super-fast recovery free-wheel diode
- Isolated baseplate for easy heat sinking
Applications
Motor Drive & Control, Power Management
Technical Specifications
Transistor Polarity
N Channel
DC Collector Current
75A
Collector Emitter Saturation Voltage
2.2V
Power Dissipation Pd
290W
Junction Temperature, Tj Max
150°C
Collector Emitter Voltage V(br)ceo
600V
No. of Pins
7Pins
IGBT Technology
IGBT 5 [Trench Gate]
Transistor Mounting
Panel
SVHC
To Be Advised
IGBT Configuration
Dual [Half Bridge]
Continuous Collector Current
75A
Collector Emitter Saturation Voltage Vce(on)
600V
Power Dissipation
290W
Operating Temperature Max
150°C
Transistor Case Style
Module
IGBT Termination
Stud
Collector Emitter Voltage Max
600V
Product Range
F Series
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
