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CM300DY-34A
IGBT Module, Dual [Half Bridge], 300 A, 1.7 kV, 2.9 kW, 150 °C, Module
Image is for illustrative purposes only. Please refer to product description.
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM300DY-34A
Newark Part No.30M3583
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 33 week(s)
Product Information
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM300DY-34A
Newark Part No.30M3583
Technical Datasheet
IGBT ConfigurationDual [Half Bridge]
Transistor PolarityDual N Channel
DC Collector Current300A
Continuous Collector Current300A
Collector Emitter Saturation Voltage1.7kV
Collector Emitter Saturation Voltage Vce(on)1.7kV
Power Dissipation Pd2.9kW
Power Dissipation2.9kW
Operating Temperature Max150°C
Junction Temperature, Tj Max150°C
Collector Emitter Voltage V(br)ceo1.7kV
Transistor Case StyleModule
No. of Pins7Pins
IGBT TerminationTab
Collector Emitter Voltage Max1.7kV
IGBT TechnologyIGBT 5 [Trench Gate]
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Product Overview
The CM300DY-34A is a dual IGBTMOD™ Module designed for use in switching applications. The A series module consists of two IGBT transistors in a half-bridge configuration with each transistor having a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking base plate, offering simplified system assembly and thermal management.
- Low drive power
- Low collector-to-emitter saturation voltage
- Discrete super-fast recovery free-wheel diode
- Isolated base plate for easy heat sinking
Applications
Motor Drive & Control, Power Management
Technical Specifications
IGBT Configuration
Dual [Half Bridge]
DC Collector Current
300A
Collector Emitter Saturation Voltage
1.7kV
Power Dissipation Pd
2.9kW
Operating Temperature Max
150°C
Collector Emitter Voltage V(br)ceo
1.7kV
No. of Pins
7Pins
Collector Emitter Voltage Max
1.7kV
Transistor Mounting
Panel
SVHC
To Be Advised
Transistor Polarity
Dual N Channel
Continuous Collector Current
300A
Collector Emitter Saturation Voltage Vce(on)
1.7kV
Power Dissipation
2.9kW
Junction Temperature, Tj Max
150°C
Transistor Case Style
Module
IGBT Termination
Tab
IGBT Technology
IGBT 5 [Trench Gate]
Product Range
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate