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CM150DY-24NF
IGBT Module, Dual [Half Bridge], 150 A, 2.5 V, 780 W, 150 °C, Module
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ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM150DY-24NF
Newark Part No.32H5454
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 29 week(s)
Product Information
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM150DY-24NF
Newark Part No.32H5454
Technical Datasheet
IGBT ConfigurationDual [Half Bridge]
DC Collector Current150A
Continuous Collector Current150A
Collector Emitter Saturation Voltage2.5V
Collector Emitter Saturation Voltage Vce(on)1.2kV
Power Dissipation Pd780W
Power Dissipation780W
Junction Temperature, Tj Max150°C
Operating Temperature Max150°C
Collector Emitter Voltage V(br)ceo1.2kV
Transistor Case StyleModule
No. of Pins7Pins
IGBT TerminationTab
Collector Emitter Voltage Max1.2kV
IGBT TechnologyIGBT 5 [Trench Gate]
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Technical Specifications
IGBT Configuration
Dual [Half Bridge]
Continuous Collector Current
150A
Collector Emitter Saturation Voltage Vce(on)
1.2kV
Power Dissipation
780W
Operating Temperature Max
150°C
Transistor Case Style
Module
IGBT Termination
Tab
IGBT Technology
IGBT 5 [Trench Gate]
Product Range
-
DC Collector Current
150A
Collector Emitter Saturation Voltage
2.5V
Power Dissipation Pd
780W
Junction Temperature, Tj Max
150°C
Collector Emitter Voltage V(br)ceo
1.2kV
No. of Pins
7Pins
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
To Be Advised
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate