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CM150DU-12F
IGBT Module, Dual [Half Bridge], 150 A, 2.2 V, 520 W, 150 °C, Module
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ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM150DU-12F
Newark Part No.95B1852
Product RangeF Series
Your Part Number
Technical Datasheet
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Product Information
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM150DU-12F
Newark Part No.95B1852
Product RangeF Series
Technical Datasheet
IGBT ConfigurationDual [Half Bridge]
Transistor PolarityN Channel
DC Collector Current150A
Continuous Collector Current150A
Collector Emitter Saturation Voltage2.2V
Collector Emitter Saturation Voltage Vce(on)600V
Power Dissipation Pd520W
Power Dissipation520W
Junction Temperature, Tj Max150°C
Operating Temperature Max150°C
Collector Emitter Voltage V(br)ceo600V
Transistor Case StyleModule
No. of Pins7Pins
IGBT TerminationTab
IGBT TechnologyIGBT 5 [Trench Gate]
Collector Emitter Voltage Max600V
Transistor MountingPanel
Product RangeF Series
SVHCTo Be Advised
Technical Specifications
IGBT Configuration
Dual [Half Bridge]
DC Collector Current
150A
Collector Emitter Saturation Voltage
2.2V
Power Dissipation Pd
520W
Junction Temperature, Tj Max
150°C
Collector Emitter Voltage V(br)ceo
600V
No. of Pins
7Pins
IGBT Technology
IGBT 5 [Trench Gate]
Transistor Mounting
Panel
SVHC
To Be Advised
Transistor Polarity
N Channel
Continuous Collector Current
150A
Collector Emitter Saturation Voltage Vce(on)
600V
Power Dissipation
520W
Operating Temperature Max
150°C
Transistor Case Style
Module
IGBT Termination
Tab
Collector Emitter Voltage Max
600V
Product Range
F Series
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate