Print Page
CM100DY-24NF
IGBT Module, Dual [Half Bridge], 100 A, 2.5 V, 650 W, 150 °C, Module
Image is for illustrative purposes only. Please refer to product description.
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM100DY-24NF
Newark Part No.73K1931
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 20 week(s)
Product Information
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM100DY-24NF
Newark Part No.73K1931
Technical Datasheet
IGBT ConfigurationDual [Half Bridge]
Continuous Collector Current100A
DC Collector Current100A
Collector Emitter Saturation Voltage2.5V
Collector Emitter Saturation Voltage Vce(on)1.2kV
Power Dissipation Pd650W
Power Dissipation650W
Operating Temperature Max150°C
Junction Temperature, Tj Max150°C
Collector Emitter Voltage V(br)ceo1.2kV
Transistor Case StyleModule
IGBT TerminationStud
No. of Pins7Pins
IGBT TechnologyIGBT 5 [Trench Gate]
Collector Emitter Voltage Max1.2kV
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Technical Specifications
IGBT Configuration
Dual [Half Bridge]
DC Collector Current
100A
Collector Emitter Saturation Voltage Vce(on)
1.2kV
Power Dissipation
650W
Junction Temperature, Tj Max
150°C
Transistor Case Style
Module
No. of Pins
7Pins
Collector Emitter Voltage Max
1.2kV
Product Range
-
Continuous Collector Current
100A
Collector Emitter Saturation Voltage
2.5V
Power Dissipation Pd
650W
Operating Temperature Max
150°C
Collector Emitter Voltage V(br)ceo
1.2kV
IGBT Termination
Stud
IGBT Technology
IGBT 5 [Trench Gate]
Transistor Mounting
Panel
SVHC
To Be Advised
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate