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CM100DY-24A
IGBT Module, Dual [Half Bridge], 100 A, 3 V, 672 W, 150 °C, Module
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ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM100DY-24A
Newark Part No.19K9202
Product RangeA Series
Your Part Number
Technical Datasheet
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Product Information
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM100DY-24A
Newark Part No.19K9202
Product RangeA Series
Technical Datasheet
IGBT ConfigurationDual [Half Bridge]
Transistor PolarityN Channel
DC Collector Current100A
Continuous Collector Current100A
Collector Emitter Saturation Voltage Vce(on)1.2kV
Collector Emitter Saturation Voltage3V
Power Dissipation Pd672W
Power Dissipation672W
Operating Temperature Max150°C
Junction Temperature, Tj Max150°C
Collector Emitter Voltage V(br)ceo1.2kV
Transistor Case StyleModule
No. of Pins7Pins
IGBT TerminationStud
Collector Emitter Voltage Max1.2kV
IGBT TechnologyIGBT 5 [Trench Gate]
Transistor MountingPanel
Product RangeA Series
SVHCTo Be Advised
Product Overview
The CM100DY-24A is a 1200V Dual IGBTMOD™ A-series Module designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse connected super-fast recovery freewheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
- Low drive power
- Low VCE (sat)
- Discrete super-fast recovery free-wheel diode
- Isolated baseplate for easy heat sinking
- ±20V Gate-emitter voltage (C-E short)
- 200A Peak collector current
- 100A Emitter current
Applications
Motor Drive & Control, Power Management
Technical Specifications
IGBT Configuration
Dual [Half Bridge]
DC Collector Current
100A
Collector Emitter Saturation Voltage Vce(on)
1.2kV
Power Dissipation Pd
672W
Operating Temperature Max
150°C
Collector Emitter Voltage V(br)ceo
1.2kV
No. of Pins
7Pins
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
To Be Advised
Transistor Polarity
N Channel
Continuous Collector Current
100A
Collector Emitter Saturation Voltage
3V
Power Dissipation
672W
Junction Temperature, Tj Max
150°C
Transistor Case Style
Module
IGBT Termination
Stud
IGBT Technology
IGBT 5 [Trench Gate]
Product Range
A Series
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:No
RoHS Phthalates Compliant:No
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate