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CM1000DUC-34SA
IGBT Module, Dual [Half Bridge], 1 kA, 1.9 V, 10 kW, 150 °C, Module
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ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM1000DUC-34SA
Newark Part No.90W4337
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 29 week(s)
Product Information
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM1000DUC-34SA
Newark Part No.90W4337
Technical Datasheet
IGBT ConfigurationDual [Half Bridge]
Transistor PolarityDual N Channel
DC Collector Current1kA
Continuous Collector Current1kA
Collector Emitter Saturation Voltage1.9V
Collector Emitter Saturation Voltage Vce(on)1.9V
Power Dissipation10kW
Power Dissipation Pd10kW
Collector Emitter Voltage V(br)ceo1.7kV
Operating Temperature Max150°C
Junction Temperature, Tj Max150°C
Transistor Case StyleModule
IGBT TerminationStud
IGBT TechnologyIGBT 5 [Trench Gate]
Collector Emitter Voltage Max1.7kV
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Technical Specifications
IGBT Configuration
Dual [Half Bridge]
DC Collector Current
1kA
Collector Emitter Saturation Voltage
1.9V
Power Dissipation
10kW
Collector Emitter Voltage V(br)ceo
1.7kV
Junction Temperature, Tj Max
150°C
IGBT Termination
Stud
Collector Emitter Voltage Max
1.7kV
Product Range
-
Transistor Polarity
Dual N Channel
Continuous Collector Current
1kA
Collector Emitter Saturation Voltage Vce(on)
1.9V
Power Dissipation Pd
10kW
Operating Temperature Max
150°C
Transistor Case Style
Module
IGBT Technology
IGBT 5 [Trench Gate]
Transistor Mounting
Panel
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate