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MT53E512M64D2NW-046 WT:B
DRAM, Mobile LPDDR4, 32 Gbit, 512M x 64bit, 2.133 GHz, 432 Pins
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ManufacturerMICRON
Manufacturer Part NoMT53E512M64D2NW-046 WT:B
Newark Part No.67AJ1405
Your Part Number
557 In Stock
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Available in quantity shown
| Quantity | Price |
|---|---|
| 1+ | $146.170 |
| 5+ | $142.250 |
| 10+ | $138.160 |
| 25+ | $136.110 |
| 50+ | $134.120 |
| 100+ | $126.070 |
Price for:Each
Minimum: 1
Multiple: 1
$146.17
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerMICRON
Manufacturer Part NoMT53E512M64D2NW-046 WT:B
Newark Part No.67AJ1405
DRAM TypeMobile LPDDR4
DRAM Density32Gbit
Memory Density32Gbit
Memory Configuration512M x 64bit
DRAM Memory Configuration512M x 64bit
Clock Frequency Max2.133GHz
Clock Frequency2.133GHz
Memory Case Style-
IC Case / Package-
No. of Pins432Pins
Supply Voltage Nom1.1V
IC MountingSurface Mount
Access Time468ps
Operating Temperature Min-25°C
Operating Temperature Max85°C
Product Range-
SVHCNo SVHC (17-Jan-2023)
Product Overview
MT53E512M64D2NW-046 WT:B is a mobile LPDDR4X/LPDDR4 SDRAM. The 16Gb mobile low-power DDR4 SDRAM with low VDDQ (LPDDR4X) is a high-speed, CMOS dynamic random-access memory device. This device is internally configured with 2 channels or 1 channel ×16 I/O, each channel having 8 banks.
- 16n prefetch DDR architecture, single-ended CK and DQS support
- 8 internal banks per channel for concurrent operation
- Single-data-rate CMD/ADR entry, on-chip temperature sensor to control self-refresh rate
- Bidirectional/differential data strobe per byte lane
- Programmable READ and WRITE latencies (RL/WL)
- Programmable and on-the-fly burst lengths (BL = 16, 32)
- Directed per-bank refresh for concurrent bank operation and ease of command scheduling
- 4GB (32Gb) total density, 4266Mb/s data rate per pin, 512 Meg x 64 configuration
- 432-ball VFBGA package
- Operating Temperature range from -25°C to +85°C
Technical Specifications
DRAM Type
Mobile LPDDR4
Memory Density
32Gbit
DRAM Memory Configuration
512M x 64bit
Clock Frequency
2.133GHz
IC Case / Package
-
Supply Voltage Nom
1.1V
Access Time
468ps
Operating Temperature Max
85°C
SVHC
No SVHC (17-Jan-2023)
DRAM Density
32Gbit
Memory Configuration
512M x 64bit
Clock Frequency Max
2.133GHz
Memory Case Style
-
No. of Pins
432Pins
IC Mounting
Surface Mount
Operating Temperature Min
-25°C
Product Range
-
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate