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LND150K1-G
MOSFET Transistor, N Channel, 13 mA, 500 V, 850 ohm, 0 V RoHS Compliant: Yes
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| Quantity | Price |
|---|---|
| 1+ | $0.640 |
| 10+ | $0.600 |
| 25+ | $0.560 |
| 50+ | $0.535 |
| 100+ | $0.510 |
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Multiple: 1
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Product Information
ManufacturerMICROCHIP
Manufacturer Part NoLND150K1-G
Newark Part No.87X8931
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds500V
Continuous Drain Current Id13mA
Drain Source On State Resistance1000ohm
On Resistance Rds(on)850ohm
Transistor Case StyleTO-236AB
Transistor MountingSurface Mount
Power Dissipation Pd360mW
Rds(on) Test Voltage0V
Gate Source Threshold Voltage Max-
Power Dissipation360mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
500V
Drain Source On State Resistance
1000ohm
Transistor Case Style
TO-236AB
Power Dissipation Pd
360mW
Gate Source Threshold Voltage Max
-
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
13mA
On Resistance Rds(on)
850ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
0V
Power Dissipation
360mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability
WARNINGProposition 65