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2N7000-G
Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerMICROCHIP
Manufacturer Part No2N7000-G
Newark Part No.53Y4360
Your Part Number
Technical Datasheet
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Product Information
ManufacturerMICROCHIP
Manufacturer Part No2N7000-G
Newark Part No.53Y4360
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id200mA
Drain Source On State Resistance5ohm
On Resistance Rds(on)5ohm
Transistor Case StyleTO-92
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation1W
Power Dissipation Pd1W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
- 60V, 5ohm, N-channel, enhancement-mode, vertical DMOS FET
- Free from secondary breakdown
- Low power drive requirement
- Ease of paralleling
- Low CISS and fast switching speeds
- Excellent thermal stability
- Integral source-drain diode
- High input impedance and high gain
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
5ohm
Transistor Case Style
TO-92
Rds(on) Test Voltage
10V
Power Dissipation
1W
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
200mA
On Resistance Rds(on)
5ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3V
Power Dissipation Pd
1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability