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IXFN40N110P
Bipolar (BJT) Single Transistor, N Channel, 34 A, 1.1 kV, 0.26 ohm, 10 V, 6.5 V
Image is for illustrative purposes only. Please refer to product description.
ManufacturerLITTELFUSE
Manufacturer Part NoIXFN40N110P
Newark Part No.14AN3393
Product RangePolar HiPerFET Series
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 27 week(s)
| Quantity | Price |
|---|---|
| 250+ | $82.850 |
Price for:Each
Minimum: 300
Multiple: 10
$24,855.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerLITTELFUSE
Manufacturer Part NoIXFN40N110P
Newark Part No.14AN3393
Product RangePolar HiPerFET Series
Channel TypeN Channel
Continuous Drain Current Id34A
Drain Source Voltage Vds1.1kV
Drain Source On State Resistance0.26ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max6.5V
Power Dissipation890W
Operating Temperature Max150°C
Product RangePolar HiPerFET Series
SVHCTo Be Advised
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
1.1kV
Rds(on) Test Voltage
10V
Power Dissipation
890W
Product Range
Polar HiPerFET Series
Continuous Drain Current Id
34A
Drain Source On State Resistance
0.26ohm
Gate Source Threshold Voltage Max
6.5V
Operating Temperature Max
150°C
SVHC
To Be Advised
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:To be advised
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate