Print Page
MUBW15-12A6K
IGBT, MODULE, N-CH, 1.2KV, 19A
Image is for illustrative purposes only. Please refer to product description.
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoMUBW15-12A6K
Newark Part No.34AC1926
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoMUBW15-12A6K
Newark Part No.34AC1926
Technical Datasheet
IGBT ConfigurationThree Phase Inverter
Continuous Collector Current19A
DC Collector Current19A
Collector Emitter Saturation Voltage3V
Collector Emitter Saturation Voltage Vce(on)3V
Power Dissipation90W
Power Dissipation Pd90W
Operating Temperature Max125°C
Junction Temperature, Tj Max125°C
Transistor Case StyleModule
IGBT TerminationSolder
Collector Emitter Voltage V(br)ceo1.2kV
Collector Emitter Voltage Max1.2kV
IGBT TechnologyNPT IGBT [Standard]
Transistor MountingPanel
Product Range-
SVHCNo SVHC (07-Jul-2017)
Technical Specifications
IGBT Configuration
Three Phase Inverter
DC Collector Current
19A
Collector Emitter Saturation Voltage Vce(on)
3V
Power Dissipation Pd
90W
Junction Temperature, Tj Max
125°C
IGBT Termination
Solder
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
No SVHC (07-Jul-2017)
Continuous Collector Current
19A
Collector Emitter Saturation Voltage
3V
Power Dissipation
90W
Operating Temperature Max
125°C
Transistor Case Style
Module
Collector Emitter Voltage V(br)ceo
1.2kV
IGBT Technology
NPT IGBT [Standard]
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Jul-2017)
Download Product Compliance Certificate
Product Compliance Certificate
WARNINGProposition 65