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ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXTH40N30Copy
Newark Part No.24M3054
Your Part Number
No Longer Available
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXTH40N30Copy
Newark Part No.24M3054
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds300V
Continuous Drain Current Id40A
Drain Source On State Resistance85mohm
On Resistance Rds(on)0.085ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Power Dissipation Pd300W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation300W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (12-Jan-2017)
Product Overview
The IXTH40N30 is a MegaMOS™ single N-channel enhancement-mode standard Power MOSFET offers rugged polysilicon gate cell structure and high power density. It is suitable for DC choppers, switch-mode and resonant-mode power supplies.
- International standard packages
- Low RDS (ON) HDMOS™ process
- Low package inductance (<lt/>5nH) - Easy to drive and to protect
- Fast switching times
- Easy to mount with 1 screw (isolated mounting screw hole)
- Space saving
Applications
Power Management, Motor Drive & Control
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
300V
Drain Source On State Resistance
85mohm
Transistor Case Style
TO-247
Power Dissipation Pd
300W
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
40A
On Resistance Rds(on)
0.085ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
300W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (12-Jan-2017)
Technical Docs (2)
Legislation and Environmental
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (12-Jan-2017)
Download Product Compliance Certificate
Product Compliance Certificate