Print Page
Image is for illustrative purposes only. Please refer to product description.

ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFH58N20Copy
Newark Part No.97K2543
Your Part Number
No Longer Available
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFH58N20Copy
Newark Part No.97K2543
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id58A
On Resistance Rds(on)0.04ohm
Drain Source On State Resistance0.04ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Power Dissipation Pd300W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation300W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (12-Jan-2017)
Product Overview
The IXFH58N20 is a 200V N-channel Enhancement Mode Power MOSFET with fast intrinsic diode (HiPerFET™) and low RDS (on) HDMOS™ process. The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Low inductance offers easy to drive and protect
- Fast intrinsic rectifier
- Space-saving s
- High power density
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
58A
Drain Source On State Resistance
0.04ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
300W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (12-Jan-2017)
Drain Source Voltage Vds
200V
On Resistance Rds(on)
0.04ohm
Transistor Case Style
TO-247
Power Dissipation Pd
300W
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
Legislation and Environmental
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (12-Jan-2017)
Download Product Compliance Certificate
Product Compliance Certificate