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IXFH20N80Q
Power MOSFET, N Channel, 800 V, 20 A, 0.42 ohm, TO-247, Through Hole
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ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFH20N80QCopy
Newark Part No.38K3170
Your Part Number
No Longer Available
Product Information
ManufacturerIXYS SEMICONDUCTOR
Manufacturer Part NoIXFH20N80QCopy
Newark Part No.38K3170
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id20A
Drain Source On State Resistance0.42ohm
On Resistance Rds(on)0.42ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd360W
Gate Source Threshold Voltage Max4.5V
Power Dissipation360W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (12-Jan-2017)
Product Overview
The IXFH20N80Q is a Q-class HiPerFET™ N-channel enhancement-mode Power MOSFET features avalanche rated and fast intrinsic rectifier.
- Low RDS (ON) and QG
- Avalanche energy and current rated
- UL94V-0 Flammability rating
- High dV/dt and low Qg
- Easy to mount
- Space savings
- High power density
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
800V
Drain Source On State Resistance
0.42ohm
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4.5V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
20A
On Resistance Rds(on)
0.42ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
360W
Power Dissipation
360W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (12-Jan-2017)
Legislation and Environmental
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (12-Jan-2017)
Download Product Compliance Certificate
Product Compliance Certificate
