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SPD07N60C3ATMA1
MOSFET, N, TO-252
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | SPD07N60C3ATMA1Copy |
| Manufacturer Standard Lead Time | 16 weeks |
| Newark Part No. | Re-Reel33P8209RL Cut Tape33P8209 |
| Also Known As | SPD07N60C3, SP001117774 |
| Your Part Number | |
| Technical Datasheet |
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 1 | $3.090 | $3.09 |
| Total Price | $3.09 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $3.090 |
| 10+ | $2.010 |
| 100+ | $1.390 |
| 500+ | $1.180 |
| 1000+ | $1.170 |
| 2500+ | $1.090 |
| 10000+ | $1.070 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | SPD07N60C3ATMA1Copy |
| Manufacturer Standard Lead Time | 16 weeks |
| Newark Part No. | Re-Reel33P8209RL Cut Tape33P8209 |
| Also Known As | SPD07N60C3, SP001117774 |
| Technical Datasheet | |
| Transistor Polarity | N Channel |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 650V |
| Continuous Drain Current Id | 7.3A |
| Drain Source On State Resistance | 0.6ohm |
| On Resistance Rds(on) | 0.54ohm |
| Transistor Case Style | TO-252 (DPAK) |
| Transistor Mounting | Surface Mount |
| Power Dissipation Pd | 83W |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 3V |
| Power Dissipation | 83W |
| No. of Pins | 3Pins |
| Operating Temperature Max | 150°C |
| Product Range | - |
| Qualification | - |
| MSL | MSL 1 - Unlimited |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
The SPD07N60C3 is a 650V CoolMOS™ N-channel Power MOSFET features ultra-low gate current. It is suitable for server, telecom, PC power and adapter applications.
- New revolutionary high voltage technology
- Extreme dV/dt rated
- High peak current capability
- Qualified according to JEDEC for target applications
- Improved transconductance
- Periodic avalanche rated
- Low specific ON-state resistance
- Very low energy storage in output capacitance (Eoss)@400V
- Field proven CoolMOS™ quality
- High efficiency and power density
- Outstanding performance
- High reliability
- Ease of use
Applications
Industrial, Communications & Networking, Consumer Electronics, Power Management
Technical Specifications
| Transistor Polarity | N Channel |
|---|---|
| Drain Source Voltage Vds | 650V |
| Drain Source On State Resistance | 0.6ohm |
| Transistor Case Style | TO-252 (DPAK) |
| Power Dissipation Pd | 83W |
| Gate Source Threshold Voltage Max | 3V |
| No. of Pins | 3Pins |
| Product Range | - |
| MSL | MSL 1 - Unlimited |
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 7.3A |
| On Resistance Rds(on) | 0.54ohm |
| Transistor Mounting | Surface Mount |
| Rds(on) Test Voltage | 10V |
| Power Dissipation | 83W |
| Operating Temperature Max | 150°C |
| Qualification | - |
| SVHC | No SVHC (25-Jun-2025) |
Technical Docs (3)
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Legislation and Environmental
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |
 | Proposition 65 |