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SPA11N60C3XKSA1
Power MOSFET, N Channel, 650 V, 11 A, 0.38 ohm, TO-220FP, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoSPA11N60C3XKSA1
Newark Part No.62M0117
Also Known AsSPA11N60C3, SP000216312
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 19 week(s)
| Quantity | Price |
|---|---|
| 1+ | $3.610 |
| 10+ | $2.630 |
| 100+ | $1.650 |
| 500+ | $1.370 |
| 1000+ | $1.300 |
| 2500+ | $1.230 |
Price for:Each
Minimum: 1
Multiple: 1
$3.61
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoSPA11N60C3XKSA1
Newark Part No.62M0117
Also Known AsSPA11N60C3, SP000216312
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id11A
Drain Source On State Resistance0.38ohm
On Resistance Rds(on)0.34ohm
Transistor Case StyleTO-220F
Transistor MountingThrough Hole
Power Dissipation Pd33W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation33W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The SPA11N60C3 is a 650V N-channel CoolMOS™ Power MOSFET with low specific on-state resistance. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.
- Very low energy storage in output capacitance (Eoss) at 400V
- Low gate charge (Qg)
- High efficiency and power density
- Outstanding performance
- High reliability
- Easy to use
Applications
Computers & Computer Peripherals, Communications & Networking, Consumer Electronics, Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.38ohm
Transistor Case Style
TO-220F
Power Dissipation Pd
33W
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
11A
On Resistance Rds(on)
0.34ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
33W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate