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SPA11N60C3XKSA1
Power MOSFET, N Channel, 650 V, 11 A, 0.38 ohm, TO-220FP, Through Hole
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ManufacturerINFINEON
Manufacturer Part NoSPA11N60C3XKSA1
Newark Part No.62M0117
Also Known AsSPA11N60C3, SP000216312
Your Part Number
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| Quantity | Price |
|---|---|
| 1+ | $3.610 |
| 10+ | $2.630 |
| 100+ | $1.650 |
| 500+ | $1.370 |
| 1000+ | $1.310 |
| 2500+ | $1.230 |
Price for:Each
Minimum: 1
Multiple: 1
$3.61
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Product Information
ManufacturerINFINEON
Manufacturer Part NoSPA11N60C3XKSA1
Newark Part No.62M0117
Also Known AsSPA11N60C3, SP000216312
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id11A
Drain Source On State Resistance0.38ohm
On Resistance Rds(on)0.34ohm
Transistor Case StyleTO-220F
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd33W
Gate Source Threshold Voltage Max3V
Power Dissipation33W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The SPA11N60C3 is a 650V N-channel CoolMOS™ Power MOSFET with low specific on-state resistance. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.
- Very low energy storage in output capacitance (Eoss) at 400V
- Low gate charge (Qg)
- High efficiency and power density
- Outstanding performance
- High reliability
- Easy to use
Applications
Computers & Computer Peripherals, Communications & Networking, Consumer Electronics, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.38ohm
Transistor Case Style
TO-220F
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
11A
On Resistance Rds(on)
0.34ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
33W
Power Dissipation
33W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
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