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ManufacturerINFINEON
Manufacturer Part NoIRS2001PBFCopy
Manufacturer Standard Lead Time52 weeks
Newark Part No.21M6576
Also Known AsSP001542642
Your Part Number
4,949 In Stock
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Delivery in 4-6 Business Days(UK stock)
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| Quantity | Price |
|---|---|
| 1+ | $3.270 |
| 10+ | $2.580 |
| 25+ | $2.370 |
| 50+ | $2.290 |
| 100+ | $2.210 |
| 250+ | $2.080 |
| 500+ | $2.040 |
Price for:Each
Minimum: 1
Multiple: 1
$3.27
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Overview
IRS2001PBF is a high voltage, high speed power MOSFET and IGBT driver with independent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 200V.
- Floating channel designed for bootstrap operation
- Fully operational to +200V
- Tolerant to negative transient voltage, dV/dt immune
- Gate drive supply range from 10V to 20V
- Undervoltage lockout, matched propagation delay for both channels
- Outputs in phase with inputs
- Low-side output voltage is -0.3V (minimum)
- Turn-on propagation delay is 160ns (typ, VS = 0V, TA = 25°C)
- Offset supply leakage current is 50µA maximum, VIN = 0V or 5V, TA = 25°C)
- 8 lead PDIP, ambient temperature range from -40 to 125°C
Technical Specifications
Driver Case Style
DIP
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
