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IRLZ34NPBF
Power MOSFET, N Channel, 55 V, 30 A, 35 mohm, TO-220AB, Through Hole
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRLZ34NPBFCopy |
| Manufacturer Standard Lead Time | 28 weeks |
| Newark Part No. | 63J7705 |
| Also Known As | SP001553290 |
| Your Part Number | |
| Technical Datasheet |
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| Quantity | Price |
|---|---|
| 1+ | $1.830 |
| 10+ | $1.200 |
| 100+ | $0.843 |
| 500+ | $0.688 |
| 1000+ | $0.674 |
| 2500+ | $0.660 |
| 10000+ | $0.647 |
Price for:Each
Minimum: 1
Multiple: 1
$1.83
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
| Manufacturer | INFINEON |
|---|---|
| Manufacturer Part No | IRLZ34NPBFCopy |
| Manufacturer Standard Lead Time | 28 weeks |
| Newark Part No. | 63J7705 |
| Also Known As | SP001553290 |
| Technical Datasheet | |
| Transistor Polarity | N Channel |
| Channel Type | N Channel |
| Drain Source Voltage Vds | 55V |
| Continuous Drain Current Id | 27A |
| On Resistance Rds(on) | 0.035ohm |
| Drain Source On State Resistance | 0.035ohm |
| Transistor Case Style | TO-220AB |
| Transistor Mounting | Through Hole |
| Rds(on) Test Voltage | 10V |
| Power Dissipation Pd | 56W |
| Gate Source Threshold Voltage Max | 2V |
| Power Dissipation | 56W |
| No. of Pins | 3Pins |
| Operating Temperature Max | 175°C |
| Product Range | - |
| Qualification | - |
| MSL | - |
| SVHC | No SVHC (25-Jun-2025) |
Product Overview
The IRLZ34NPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
- Dynamic dv/dt rating
- Fully avalanche rated
- Logic-level gate drive
- Advanced process technology
Applications
Power Management
Technical Specifications
| Transistor Polarity | N Channel |
|---|---|
| Drain Source Voltage Vds | 55V |
| On Resistance Rds(on) | 0.035ohm |
| Transistor Case Style | TO-220AB |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 2V |
| No. of Pins | 3Pins |
| Product Range | - |
| MSL | - |
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 27A |
| Drain Source On State Resistance | 0.035ohm |
| Transistor Mounting | Through Hole |
| Power Dissipation Pd | 56W |
| Power Dissipation | 56W |
| Operating Temperature Max | 175°C |
| Qualification | - |
| SVHC | No SVHC (25-Jun-2025) |
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Legislation and Environmental
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | No SVHC (25-Jun-2025) |
| Download Product Compliance Certificate | Product Compliance Certificate |