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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFP4321PBF
Newark Part No.61M6840
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id78A
Drain Source On State Resistance0.0155ohm
On Resistance Rds(on)0.012ohm
Transistor Case StyleTO-247AC
Transistor MountingThrough Hole
Power Dissipation Pd310mW
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation310mW
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The IRFP4321PBF is a HEXFET® N-channel Power MOSFET offers improved diode recovery which improves switching and EMI performance. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
- Low RDS (ON) reduces losses
- Low gate charge improves the switching performance
- Fully characterized avalanche SOA
- 30V Gate voltage rating improves robustness
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
150V
Drain Source On State Resistance
0.0155ohm
Transistor Case Style
TO-247AC
Power Dissipation Pd
310mW
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
78A
On Resistance Rds(on)
0.012ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Power Dissipation
310mW
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
