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ManufacturerINFINEON
Manufacturer Part NoIRFP3306PBF
Newark Part No.08N6351
Your Part Number
Technical Datasheet
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Available in quantity shown
| Quantity | Price |
|---|---|
| 1+ | $2.850 |
| 10+ | $2.520 |
| 25+ | $2.260 |
| 50+ | $2.150 |
| 100+ | $1.920 |
| 250+ | $1.680 |
| 500+ | $1.640 |
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Minimum: 1
Multiple: 1
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIRFP3306PBF
Newark Part No.08N6351
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id120A
On Resistance Rds(on)0.0033ohm
Drain Source On State Resistance3300µohm
Transistor Case StyleTO-247AC
Transistor MountingThrough Hole
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max4V
Power Dissipation220W
Power Dissipation Pd220W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
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Product Overview
The IRFP3306PBF is a HEXFET® N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and di/dt capability
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.0033ohm
Transistor Case Style
TO-247AC
Rds(on) Test Voltage
20V
Power Dissipation
220W
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
120A
Drain Source On State Resistance
3300µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
220W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate